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Journal Article
Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG-Doped Deep Trench of p-Pillar
- Authors
- Sang Gi Kim, Hoon Soo Park, Kyoung Il Na, Seong Wook Yoo, Jongil Won, Jin Gun Koo, Sang Hoon Chai, Hyung-Moo Park, Yil Suk Yang, Jin Ho Lee
- Issue Date
- 2013-08
- Citation
- ETRI Journal, v.35, no.4, pp.632-637
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device. © 2013 ETRI.
- KSP Keywords
- Boron doping, Breakdown Voltage, Deep Trench, Doping concentration, Doping process, Forming processes, Glass doping, Process complexity, Process conditions, Silicate glasses, Uniformly distributed