상세정보
학술지
Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG-Doped Deep Trench of p-Pillar
- 발행일
- 201308
- 출처
- ETRI Journal, v.35 no.4, pp.632-637
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 12MB2100, BLDC 모터용 고전압/대전류 파워모듈 및 ESD 기술개발, 양일석
- 초록
- In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device. © 2013 ETRI.
- KSP 제안 키워드
- Boron doping, Breakdown voltage(BDV), Deep Trench, Doping concentration, Doping process, Forming processes, Glass doping, Process complexity, Process conditions, Silicate glasses, Uniformly distributed