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학술지 Temperature and Injection Current Dependent Optical and Thermal Characteristics of InGaN-Based Green Large-Area Light-Emitting Diodes
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저자
이수현, 이희관, 배성범, 김종배, 김성복, 유재수
발행일
201311
출처
Physica Status Solidi (A), v.210 no.11, pp.2479-2484
ISSN
1862-6300
출판사
Wiley-VCH Verlag GmbH
DOI
https://dx.doi.org/10.1002/pssa.201228256
협약과제
13VB1300, 200mW급 풀칼라 디스플레이용 고출력 녹색(525nm) LED 개발, 김종배
초록
Optical, spectral, and thermal characteristics of InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) with a large chip size of 0.8 × 1 mm2, operating at {\\lambda} ~ 525 nm, on patterned sapphire substrate (PSS) were studied. The temperature-dependent optical and spectral properties of LEDs were measured and analyzed. The junction temperature (Tj) was also determined by the forward voltage method, in comparison with the simulation results which were theoretically calculated by a three-dimensional anisotropic heat dissipation model based on the finite element method. Under an injection current of 350 mA at 298 K, the optical output power and forward voltage were obtained to be 63.5 mW and 3.98 V, respectively. The characteristic temperature was found to be ~438 K at an injection current of 350 mA. The Tj was increased with increasing the injection current. From the measured Tj values, the thermal resistance (Rth) value was experimentally obtained to be ~6.31 K W-1, which was well consistent with the simulated result (Rth ~ 6.24 K W -1). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
키워드
device characteristics, finite element methods, InGaN, light-emitting diodes
KSP 제안 키워드
525 nm, Area Light, Characteristic temperature, Co. KGaA, Device characteristics, Dissipation model, Finite Element Method(FEM), Forward voltage method, Heat Dissipation, InGaN/GaN multiple quantum well, Injection current