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Journal Article Electronic Effect of Na on Cu(In,Ga)Se2 Solar Cells
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Authors
Dae-Hyung Cho, Kyu-Seok Lee, Yong-Duck Chung, Ju-Hee Kim, Soo-Jeong Park, Jeha Kim
Issue Date
2012-07
Citation
Applied Physics Letters, v.101, no.2, pp.1-4
ISSN
0003-6951
Publisher
American Institute of Physics (AIP),
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.4733679
Project Code
11MB5700, Dry process technology for buffer layer fabrication using Sulfurization, Chung Yong-Duck
Abstract
We report the effect of Na on the electronic properties of Cu(In,Ga)Se 2 (CIGS) thin-film solar cells with a structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/SiO x/soda-lime glass (SLG). The diffusion of Na from the SLG into the CIGS layer was systematically controlled by varying the thickness of SiO x. As the Na content increased, the hole concentration of CIGS was enhanced, while the band-gap was nearly constant, which led to a lower Fermi level in the CIGS towards its valence-band edge. The Na-induced increment in the built-in potential (V bi) across the n-(ITO/i-ZnO/CdS)/p-CIGS junction yielded an increment of open-circuit voltage that well agreed with the calculated V bi. © 2012 American Institute of Physics.
KSP Keywords
Band gap, Built-in potential, CIGS layer, Electronic effect, Electronic properties, Fermi level, Hole concentration, Open circuit voltage(VOC), SiO x, Soda lime glass(SLG), Thin film solar cells