상세정보
학술지
Unusual Instability Mode of Transparent All Oxide Thin Film Transistor under Dynamic Bias Condition
- 발행일
- 201309
- 출처
- Applied Physics Letters, v.103 no.12, pp.1-5
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 13VB1900, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
- 초록
- We report a degradation behavior of fully transparent oxide thin film transistor under dynamic bias stress which is the condition similar to actual pixel switching operation in active matrix display. After the stress test, drain current increased while the threshold voltage was almost unchanged. We found that shortening of effective channel length is leading cause of increase in drain current. Electrons activate the neutral donor defects by colliding with them during short gate-on period. These ionized donors are stabilized during the subsequent gate-off period due to electron depletion. This local increase in doping density reduces the channel length. © 2013 AIP Publishing LLC.
- KSP 제안 키워드
- Bias stress, Donor defects, Doping Density, Drain current, Effective Channel Length, Instability modes, Ionized donors, Neutral donor, Stress test, Switching operation, Thin-Film Transistor(TFT)