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Unusual Instability Mode of Transparent All Oxide Thin Film Transistor under Dynamic Bias Condition
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- Authors
- Himchan Oh, Chi-Sun Hwang, Jae-Eun Pi, Min Ki Ryu, Sang-Hee Ko Park, Hye Yong Chu
- Issue Date
- 2013-09
- Citation
- Applied Physics Letters, v.103, no.12, pp.1-5
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report a degradation behavior of fully transparent oxide thin film transistor under dynamic bias stress which is the condition similar to actual pixel switching operation in active matrix display. After the stress test, drain current increased while the threshold voltage was almost unchanged. We found that shortening of effective channel length is leading cause of increase in drain current. Electrons activate the neutral donor defects by colliding with them during short gate-on period. These ionized donors are stabilized during the subsequent gate-off period due to electron depletion. This local increase in doping density reduces the channel length. © 2013 AIP Publishing LLC.
- KSP Keywords
- Bias Stress, Donor defects, Doping Density, Drain current, Effective Channel Length, Instability mode, Ionized donors, Neutral donor, Stress test, Switching operation, Thin-Film Transistor(TFT)