상세정보
학술대회
A Novel Super-Junction Trench Gate MOSFET Fabricated Using High Aspect-Ratio Trench Etching and Boron Lateral Diffusion Technologies
- 발행일
- 201305
- 출처
- International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2013, pp.233-236
- 협약과제
- 12MB2100, BLDC 모터용 고전압/대전류 파워모듈 및 ESD 기술개발, 양일석
- 초록
- We propose a super-junction trench gate MOSFET (SJ TGMOSFET) which is fabricated with a simple p-pillar forming process using deep trench and boron silicate glass (BSG) doping process technologies to reduce the process complexity. The p-pillar region is formed through lateral boron diffusion from BSG film and annealing process after the silicon deep etching. For the SJ TGMOSFET fabricated with BSG lateral diffusion, the controls of the boron concentration and the profile are important to achieve the charge balance between p-and n-pillars. Throughout the various boron doping experiments as well as process simulation, we optimize process conditions related with p-pillar depth, BSG doping concentration and diffusion temperature. Due to the trenched p-pillar, the potential of the SJ TGMOSFET more uniformly distributes and widely spreads into the bulk region of the n-drift layer comparing to the conventional TGMOSFET. The measured breakdown voltage of SJ TGMOSFET increases at least 28 % than that of the conventional TGMOSFET. © 2013 IEEE.
- KSP 제안 키워드
- Boron doping, Breakdown voltage(BDV), Deep Trench, Doping concentration, Doping process, Forming processes, High aspect ratio, Lateral diffusion, Process complexity, Process conditions, Silicate glasses