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학술지 Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma
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저자
우종창, 최창억, 김창일
발행일
201308
출처
Transactions on Electrical and Electronic Materials, v.14 no.4, pp.216-220
ISSN
1229-7607
출판사
한국전기전자재료학회
DOI
https://dx.doi.org/10.4313/TEEM.2013.14.4.216
협약과제
12MB4200, 스마트마이크로센서 상용화를 위한 파운드리 기반기술 구축, 최창억
초록
The etching characteristics of indium zinc oxide (IZO) in Cl2/Ar plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing Cl2 fraction in the Cl2/Ar plasma, and with increasing source power, bias power, and process pressure. In the Cl2/Ar (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to SiO2 were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching. © 2013 KIEEME. All rights reserved.