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Journal Article The Observation of Electrical Hysteric Behavior in Synthesized V2O5 Nanoplates by Recrystallization
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Authors
Chang-Hee Kim, Yong Ju Yun, Byung Hoon Kim, Won G. Hong, Yark Yeon Kim, Won lck Jang, Nae-Eung Lee, Han Young Yu
Issue Date
2013-12
Citation
Journal of Nanomaterials, v.2013, pp.1-8
ISSN
1687-4110
Publisher
Hindawi Publishing
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1155/2013/807895
Abstract
The anomalous electrical conductance for the V2O5 foam synthesized via a foaming process was measured. In the annealing process, the synthesized V2O5 foam is recrystallized with the increase of annealing temperature. The recrystallization procedure was characterized by using physical analysis tools such as thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and X-ray diffractometer. In the electrical analysis technique of current-voltage characteristics as a function of annealing temperature, an anomalous hysteric behavior appears at the annealing temperature of 400°C. We conclude that the recrystallization of V2O5 nanoplates results in the anomalous behavior in voltage-dependent current characteristics. © 2013 Chang-Hee Kim et al.
KSP Keywords
Annealing temperature, Anomalous behavior, Current characteristics, Differential scanning calorimetry(photo-DSC), Differential scanning calorimetry (dsc), Electrical analysis, Foaming process, Recrystallization procedure, Scanning electron microscopy(S.E.M.), Thermogravimetric analysis (tga), Transmission Electron Microscopy(TEM)
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