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Conference Paper
Analysis of Forward Characteristics in AlGan/GaN SBD with Schottky Contact Lying on Mesa Edge
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- Authors
- Youngrak Park, Sangchoon Ko, Wooyoung Jang, Jungjin Kim, Woojin Jang, Sungbum Bae, Jaekyoung Mun, Eunsoo Nam
- Issue Date
- 2013-09
- Citation
- International Conference on Solid State Devices and Materials (SSDM) 2013, pp.144-145
- Language
- English
- Type
- Conference Paper
- Abstract
- AlGaN/GaN SBD employing the structure with covering mesa edge by Schottky metal has been proposed and fabricated. Novel properties such as turn-on voltage shift and diode idealization were found. The corresponding turn-on voltage shift is about -0.15 V. We believe that mesa edge contact helps a SBD on Al-GaN/GaN to be idealized.
- KSP Keywords
- Schottky contacts, Turn-on voltage, Voltage shift, edge contact