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학술대회 CuOx/a-Si:H Heterojunction Thin-film Solar Cell with an n-type μc-Si:H Depletion-assisting Layer
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저자
발행일
201311
출처
Global Photovoltaic Conference (GPVC) 2013, pp.1-1
DOI
https://dx.doi.org/10.1002/pip.2603
협약과제
12MB4900, 유연성 철강소재기판상에서 효율13%를 갖는 Si/SiGe 탠덤 박막태양전지개발, 윤선진
초록
The development of CuOx thin films with n-type conduction properties allows us to successfully fabricate n-CuOx/intrinsic hydrogenated amorphous silicon (i-a-Si:H) heterojunction solar cells (HSCs) for the first time. A highly n-doped hydrogenated microcrystalline Si (n-μc-Si:H) layer was employed as a depletion-assisting layer to further improve the performance of n-CuOx/i-a-Si:H HSCs. This new application of the CuOx thin film could lead to further progress in various heterojunction solar cells and realization of colours for BIPV windows
키워드
buffer layer, cuprous oxide, heterojunction solar cell, Si thin film, solar cell
KSP 제안 키워드
Buffer layer, Conduction properties, Heterojunction solar cells, Microcrystalline Si, Si thin film, Thin film solar cells, a-Si:H, cuprous oxide, highly N-doped, intrinsic hydrogenated amorphous silicon, n-type conduction