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Conference Paper
Effects of Various Field Plates for Normally-Off GaN MISFETs
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- Authors
- Woojin Chang, Ho-Kyun Ahn, Seong-Bum Bae, Jung-Hee Lee, Sang-Choon Ko, YoungRak Park, Jeong-Jin Kim, Woo-Young Chang, Jin-Sik Kim, Jae-Kyoung Mun
- Issue Date
- 2013-06
- Citation
- International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2013, pp.332-333
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper presents various field plates (FPs) fabricated on normally-off GaNMetal-Insulator-Semiconductor Field Effect Transistors (MISFETs) using an AlGaN/GaN-based epi-wafer. GaN MISFETs with three different FPs and without FP were fabricated to compare effects on various FPs. There are three different FPs of a gamma-shaped gate, a floated FPs located between the gates and the drains, and a source-connected FP with the floated FP in the MISFETs. The fabricated normally-off GaN MISFETs with the floated FPs exhibited a threshold voltage of 1.5~2 V, a drain current density of 400 mA/mm at a gate voltage of 10 V, a specific on-resistance of 1~4.5 m cm 2 and a breakdown voltage of 570 V.
- KSP Keywords
- Breakdown voltage(BDV), Drain current, Field Plate, Field effect transistors(Substrate temperature), GaN-Based, Normally-Off, current density, gate voltage, specific on-resistance, threshold voltage(Vth)