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Electrical and optical properties of radio frequency magnetron-sputtered lightly aluminum-doped zinc oxide thin films deposited in hydrogen–argon gas
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- Authors
- Kyung-Hyun Kim, Hae-Won Choi, Dae-Hyung Cho, Yong-Duck Chung, Kyu-Seok Lee, Nae-Man Park, Jeha Kim
- Issue Date
- 2013-07
- Citation
- Thin Solid Films, v.540, pp.142-145
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We studied the electrical and optical properties of lightly aluminum-doped zinc oxide (L-AZO) films, which were deposited on soda-lime glass substrates by radio frequency (RF) magnetron sputtering using a 0.2 wt.% aluminum-doped zinc oxide target and a 0.3 wt.% hydrogen-mixed argon (Ar/0.3% H2) gas. The L-AZO films were characterized in terms of structural, optical, and electrical properties by X-ray diffraction, ultraviolet-visible spectrophotometry, photoluminescence and Hall measurements at room temperature. The Al contents of the L-AZO film were analyzed with secondary ion mass spectroscopy. As the Ar/0.3%H2 gas flow was increased up to 200 sccm, the transmittance and conductivity of the film simultaneously improved as a function of the increasing flow rate without additional thermal or gas treatment. The 40 nm-thick L-AZO film, which was deposited by an Ar/0.3% H 2 gas flow of 200 sccm at a substrate temperature of 100°C, had a carrier concentration of 1.0 × 1020/cm3, resistivity of 5.5 × 10-3 廓-cm, and an average transmittance of 93% in the wavelength range from 300 nm to 2000 nm. © 2013 Elsevier B.V. All rights reserved.
- KSP Keywords
- 40 nm, AZO film, Al contents, Aluminum-doped zinc oxide thin films, Argon gas, Carrier concentration, Electrical properties, Flow rate, Gas treatment, Glass substrate, H 2