상세정보
학술지
Electrical and Optical Properties of Radio Frequency Magnetron-Sputtered Lightly Aluminum-Doped Zinc Oxide Thin Films Deposited in Hydrogen-Argon Gas
- 발행일
- 201307
- 출처
- Thin Solid Films, v.540, pp.142-145
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 협약과제
- 11MB3100, 반응성 스퍼터링을 이용한 CIGS 초박막 고효율 태양전지 기술 개발, 김제하
- 초록
- We studied the electrical and optical properties of lightly aluminum-doped zinc oxide (L-AZO) films, which were deposited on soda-lime glass substrates by radio frequency (RF) magnetron sputtering using a 0.2 wt.% aluminum-doped zinc oxide target and a 0.3 wt.% hydrogen-mixed argon (Ar/0.3% H2) gas. The L-AZO films were characterized in terms of structural, optical, and electrical properties by X-ray diffraction, ultraviolet-visible spectrophotometry, photoluminescence and Hall measurements at room temperature. The Al contents of the L-AZO film were analyzed with secondary ion mass spectroscopy. As the Ar/0.3%H2 gas flow was increased up to 200 sccm, the transmittance and conductivity of the film simultaneously improved as a function of the increasing flow rate without additional thermal or gas treatment. The 40 nm-thick L-AZO film, which was deposited by an Ar/0.3% H 2 gas flow of 200 sccm at a substrate temperature of 100°C, had a carrier concentration of 1.0 × 1020/cm3, resistivity of 5.5 × 10-3 廓-cm, and an average transmittance of 93% in the wavelength range from 300 nm to 2000 nm. © 2013 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- 40 nm, AZO film, Al contents, Aluminum-doped zinc oxide thin films, Argon gas, Carrier concentration, Electrical and optical properties, Field effect transistors(Substrate temperature), Flow rate, Gas flow, Gas treatment