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Conference Paper
Electronic Properties of (Li, Al)-doped ZnO field effect transistors fabricated by Pulsed Laser Deposition
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- Authors
- Issue Date
- 2013-12
- Citation
- International Conference on Advanced Materials and Devices (ICAMD) 2013, pp.1-1
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Doped ZnO, Electronic properties, Field Effect Transistor(FET), Pulsed-laser deposition(PLD)