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학술대회 GaN MMIC Broadband Doherty Power Amplifier
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저자
지승훈, 이주연, 박봉혁, 김철호, 김범만
발행일
201311
출처
Asia-Pacific Microwave Conference (APMC) 2013, pp.603-605
DOI
https://dx.doi.org/10.1109/APMC.2013.6694878
협약과제
13VI1400, 스마트 모바일 서비스를 위한 B4G 이동통신 기술 개발, 송평중
초록
A quarter-wavelength transformer, phase compensation network, offset line are the bandwidth limiting factors of Doherty PAs. In this paper, we expand the bandwidth of the Doherty PA by employing a new structure. The conventional phase compensation network is merged into an input matching circuit and the offset line is resonated-out by an inductor. The quarter wavelength transformer has a low-Q characteristic compared to that of conventional one. With the proposed topology, a broadband Doherty PA is implemented using TriQuint 3MI 0.25μm GaN-HEMT MMIC process. Across 2.1-2.7 GHz, the implemented PA delivered a DE of over 40.5%, a gain of over 11.8 dB and ACPR of below -45dBc at an average power of over 33.2 dBm for LTE signal with a 6.5 dB peak-to-average power ratio. This fully integrated circuit has a chip-size of 3.5mm by 1.9mm. © 2013 IEEE.
KSP 제안 키워드
Doherty PA, Doherty power amplifier(DPA), Fully integrated, GaN HEMT, Input matching, Integrated circuit, Limiting factors, Peak-to-Average-Power-Ratio(PAPR), Quarter-wavelength, bandwidth limiting, compensation network