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Journal Article
Effect of Silicide/Silicon Hetero-Junction Structure on Thermal Conductivity and Seebeck Coefficient
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- Authors
- Choi Wonchul, Park Young-Sam, Hyun Younghoon, Zyung Taehyoung, Kim Jaehyeon, Kim Soojung, Jeon Hyojin, Shin Mincheol, Jang Moongyu
- Issue Date
- 2013-12
- Citation
- Journal of Nanoscience and Nanotechnology, v.13, no.12, pp.7801-7805
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 1262짹37 W/m K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center. Copyright © 2013 American Scientific Publishers All rights reserved.
- KSP Keywords
- Bulk silicon, Bulk structure, Electrical Conductivity, Heat flow, Hetero-structure, I-V measurement, Initialization Vector(IV), Laminated structures, Phonon transmission, Rapid thermal annealing(RTA), Rf sputtering