BROWSE
Detail
Conference Paper
High Mobility Oxide TFT for Large Area High Resolution AMOLED
Cited 10 time in 
Share 
Share
- Authors
- Sang-Hee Ko Park, Jong Woo Kim, Minki Ryu, In Yong Eom, Jae-Eun Pi, OhSang Kwon, Eunsook Park, Himchan Oh, Chi-Sun Hwang, Sun Kwon Lim
- Issue Date
- 2013-05
- Citation
- Society for Information Display (SID) International Symposium 2013, pp.18-21
- Language
- English
- Type
- Conference Paper
- Abstract
- The adoption of bi-layered etch stop layer (BiESL) for oxide thin film transistor with high carrier mobility was proposed for the application to the large area high resolution AMOLED. A novel bi-layered etch stop structure composed of Al2O3/SiO2, in which thin and dense Al2O3 film prepared by atomic layer deposition was deposited on the PECVD SiO2 layer. High mobility of In-Ga-Zn-O TFT with the proposed BiESL showed no significant change in turn-on voltage, even without passivation film. The field-effect saturation mobility and sub-threshold swing were measured as 29 cm2/V.s and 0.21 V/dec, respectively. Hydrogen doping during the PECVD SiNx passivation process can be effectively prevented by the introduction of Al2O3. Furthermore organic planarization film can be coated directly on top of the TFT array without causing any significant degradation of TFT performance. © 2013 Society for Information Display.
- KSP Keywords
- As 2, Atomic Layer Deposition, Etch stop layer, High resolution, In-Ga-Zn-O, Information display, Oxide TFTs, PECVD SiNx, Passivation film, Saturation mobility, SiNx passivation