상세정보
학술지
Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In-Ga-Zn-O Thin-Film Transistors
- 발행일
- 201310
- 출처
- Japanese Journal of Applied Physics, v.52 no.10 PART1, pp.1-3
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 13VB2100, 고품위 plastic AMOLED 원천 기술 개발, 박상희
- 초록
- We proposed a bilayered etch-stop layer (BiESL) composed of Al 2O3/SiO2 for the high-mobility oxide thin-film transistor (TFT) fabricated with lowresistivity u electrodes. The In-Ga-Zn-O TFT employing the BiESL showed no marked degradation in its high mobility and transfer haracteristics even after the conventional passivation process using SiNx film, which causes hydrogen incorporation into the active channel. xcellent barrier properties of atomic-layer-deposited Al2O3 film could provide the feasibility for the direct deposition of organic planarization film ithout the need for an extra passivation layer. The proposed BiESL structure was also suggested to be compatible with the simple patterning rocess of Cu electrodes. © 2013 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Active channel, Applied physics, Cu electrodes, Etch-stop, High Mobility, Hydrogen incorporation, In-Ga-Zn-O(IGZO), Thin-Film Transistor(TFT), barrier properties, direct deposition, need for