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Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In-Ga-Zn-O Thin-Film Transistors
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- Authors
- Sang-Hee Ko Park, Jong Woo Kim, Min-Ki Ryu, Jae-Eun Pi, Chi-Sun Hwang, Sung-Min Yoon
- Issue Date
- 2013-10
- Citation
- Japanese Journal of Applied Physics, v.52, no.10 PART1, pp.1-3
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We proposed a bilayered etch-stop layer (BiESL) composed of Al 2O3/SiO2 for the high-mobility oxide thin-film transistor (TFT) fabricated with lowresistivity u electrodes. The In-Ga-Zn-O TFT employing the BiESL showed no marked degradation in its high mobility and transfer haracteristics even after the conventional passivation process using SiNx film, which causes hydrogen incorporation into the active channel. xcellent barrier properties of atomic-layer-deposited Al2O3 film could provide the feasibility for the direct deposition of organic planarization film ithout the need for an extra passivation layer. The proposed BiESL structure was also suggested to be compatible with the simple patterning rocess of Cu electrodes. © 2013 The Japan Society of Applied Physics.
- KSP Keywords
- Active channel, Applied physics, Barrier properties, Cu electrodes, Etch-stop, Hydrogen incorporation, In-Ga-Zn-O, Thin-Film Transistor(TFT), direct deposition, high mobility, need for