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학술대회 Improvement of C-Si Surface Passivation using Dual Intrinsic A-Si:H Layers for Silicon Heterojunction Solar Cells
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저자
이규성, 연창봉, 윤선진, 임정욱
발행일
201306
출처
Photovoltaic Specialists Conference (PVSC) 2013, pp.1254-1256
DOI
https://dx.doi.org/10.1109/PVSC.2013.6744368
협약과제
12MB4800, 초고효율 소자구조 및 저가 공정기술을 결합한 융합형 태양 전지 개발, 임정욱
초록
Crystalline silicon (c-Si) surface should be passivated effectively to reduce the surface recombination losses for silicon heteroj unction solar cells. To prevent the epitaxial growth of a-Si:H films near c-Si surfaces and improve the effective carrier lifetime, dual passivation layers were obtained using inductively coupled plasma chemical vapor deposition process with an intermediate hydrogen dilution for smooth interface layer and high hydrogen dilution for dense cover layer. The effective lifetime and implied open circuit voltage are 148.1 μ s and 663 mV for a dual intrinsic a-Si:H passivated sample which is higher than 137.8 μs and 650 mV of single intrinsic a-Si:H film. Thus, the introduction of dual intrinsic a-Si:H layers is a viable method for the c-Si surface passivation. © 2013 IEEE.
키워드
Dual layer, Heteroj unction solar cells, Hydrogenated amorphous silicon, Passivation
KSP 제안 키워드
Channel State Information(CSI), Chemical vapor deposition process, Chemical vapour deposition(CVD), Cover layer, Crystalline silicon, Dual layer, Effective carrier lifetime, Effective lifetime, Inductively coupled plasma chemical vapor deposition, Inductively-coupled plasma(ICP), Open circuit voltage(VOC)