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Organic–inorganic hybrid gate dielectric for solution-processed ZnO thin film transistors
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- Authors
- Ji-Young Oh, Sang-Chul Lim, Joo Yeon Kim, Chul Am Kim, Kyoung-Ik Cho, Seong Deok Ahn, Jae Bon Koo, Sung-Min Yoon
- Issue Date
- 2013-09
- Citation
- Journal of Vacuum Science and Technology B, v.31, no.5, pp.1-6
- ISSN
- 1071-1023
- Publisher
- American Vacuum Society (AVS)
- Language
- English
- Type
- Journal Article
- Abstract
- The preparation of a hybrid dielectric film was carried out by blending sol-gel-derived sodium beta alumina (SBA) and poly(4-vinylphenol) (PVP) to enhance the capacitance of a gate dielectric film. PVP-SBA was cured at a temperature sufficiently low enough to apply to a plastic substrate, while maintaining good electrical properties and uniformity. Addition of sol-gel-derived SBA improved the film density, resulting in good PVP-SBA thermal stability. The prepared PVP-SBA was used for high-performance aqueous solution-based ZnO transistors at 200 °C. © 2013 American Vacuum Society.
- KSP Keywords
- 4-vinylphenol(Poly), Aqueous solution, Electrical properties, Film density, Gate dielectric film, High performance, Hybrid dielectric, Plastic substrate, Sodium beta alumina, Sol-gel-derived, Solution-processed