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A High Voltage Swing Dual-Band Bandpass ΔΣ Modulator for Mobile Base-Station
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- Authors
- Bonghyuk Park, Seunghyun Jang, Philip Ostrovskyy, Jaeho Jung
- Issue Date
- 2013-04
- Citation
- IEEE Microwave and Wireless Components Letters, v.23, no.4, pp.199-201
- ISSN
- 1531-1309
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A fully integrated high voltage swing dual-band continuous-time bandpass delta-sigma modulator (CT BPDSM) with a high voltage swing and fabricated on a 0.25 μm SiGe BiCMOS is presented. The proposed CT BPDSM consists of a two-stage second-order resonator, a high speed comparator, multi-feedback current DACs, and a high voltage swing driver. The band selection is controlled using a capacitor bank, and fine frequency tuning is conducted by a varactor. At 883 and 955 MHz, the implemented BPDSM with a high voltage swing shows a peak SNR of 40.6 and 41.9 dB, and an error vector magnitude (EVM) of 5.48%, 3.48%, respectively. In addition, it has a differential output voltage swing of 1.55 Vp-p with a dc power consumption of 635.3 mW. © 2001-2012 IEEE.
- KSP Keywords
- Band selection, Capacitor bank, Continuous-Time, Dc power, Dual-band, Frequency tuning, High voltage swing, High-speed comparator, Mobile Base, Multi-feedback, Output Voltage