상세정보
학술지
A High Voltage Swing Dual-Band Bandpass ΔΣ Modulator for Mobile Base-Station
- 발행일
- 201304
- 출처
- IEEE Microwave and Wireless Components Letters, v.23 no.4, pp.199-201
- ISSN
- 1531-1309
- 출판사
- IEEE
- 협약과제
- 13VI1600, 차세대 이동통신 기지국용 Class-S 전력증폭기 기술 연구, 정재호
- 초록
- A fully integrated high voltage swing dual-band continuous-time bandpass delta-sigma modulator (CT BPDSM) with a high voltage swing and fabricated on a 0.25 μm SiGe BiCMOS is presented. The proposed CT BPDSM consists of a two-stage second-order resonator, a high speed comparator, multi-feedback current DACs, and a high voltage swing driver. The band selection is controlled using a capacitor bank, and fine frequency tuning is conducted by a varactor. At 883 and 955 MHz, the implemented BPDSM with a high voltage swing shows a peak SNR of 40.6 and 41.9 dB, and an error vector magnitude (EVM) of 5.48%, 3.48%, respectively. In addition, it has a differential output voltage swing of 1.55 Vp-p with a dc power consumption of 635.3 mW. © 2001-2012 IEEE.
- KSP 제안 키워드
- Band selection, Capacitor bank, Continuous-Time, Dc power, Dual-band, Frequency tuning, Fully integrated, High voltage swing, High-speed comparator, Mobile Base, Multi-feedback