상세정보
학술지
Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment
- 발행일
- 201311
- 출처
- Thin Solid Films, v.547, pp.106-110
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 협약과제
- 12DB1200, GaN 트랜지스터 기반의 Ku-Band 고출력 증폭기 개발, 임종원
- 초록
- We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 횇 thick were deposited by plasma-enhanced chemical vapor deposition at 260 C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (fT) of 18 GHz, and a maximum oscillation frequency (fmax) of 66 GHz. © 2013 Elsevier B.V.
- KSP 제안 키워드
- 18 GHz, 6 GHz, Breakdown voltage(BDV), Cut-off frequency, Double plasma, High electron mobility transistor(HEMT), Nitride layer, Plasma process, Plasma-enhanced chemical vapor deposition(PECVD), Silicon Nitride, Transistor devices