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Journal Article Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment
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Authors
Jong-Won Lim, Ho-Kyun Ahn, Seong-il Kim, Dong-Min Kang, Jong-Min Lee, Byoung-Gue Min, Sang-Heung Lee, Hyung-Sup Yoon, Chull-Won Ju, Haecheon Kim, Jae-Kyoung Mun, Eun-Soo Nam, Hyung-Moo Park
Issue Date
2013-11
Citation
Thin Solid Films, v.547, pp.106-110
ISSN
0040-6090
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.tsf.2013.04.103
Project Code
12DB1200, GaN 트랜지스터 기반의 Ku-Band 고출력 증폭기 개발, Jong-Won Lim
Abstract
We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 횇 thick were deposited by plasma-enhanced chemical vapor deposition at 260 C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (fT) of 18 GHz, and a maximum oscillation frequency (fmax) of 66 GHz. © 2013 Elsevier B.V.
KSP Keywords
18 GHz, 6 GHz, Breakdown voltage(BDV), Double plasma, High electron mobility transistor(HEMT), Nitride layer, Plasma process, Plasma-enhanced chemical vapor deposition(PECVD), Silicon Nitride, Transistor devices, Treatment process