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학술지 Fabrication of Multi-Electrode Array Platforms for Neuronal Interfacing with Bi-Layer Lift-off Resist Sputter Deposition
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저자
김용희, 김국화, 백남섭, 한영환, 김아영, 정명애, 정상돈
발행일
201309
출처
Journal of Micromechanics and Microengineering, v.23 no.9, pp.1-7
ISSN
0960-1317
출판사
Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1088/0960-1317/23/9/097001
협약과제
12SC1400, 인공망막 이식용 생체적합성 나노-바이오 플렉시블 전극 기술 개발(총괄과제명 : 시각장애인의 시각 기능 회복을 위한 인공시각 인터페이스 기술), 정상돈
초록
We report a bi-layer lift-off resist (LOR) technique in combination with sputter deposition of silicon dioxide (SiO2) as a new passivation method in the fabrication of a multi-electrode array (MEA). Using the photo-insensitive LOR as a sacrificial bottom layer and the negative photoresist as a patterning top layer, and performing low-temperature sputter deposition of SiO2 followed by lift-off, we could successfully fabricate damage-free indium-tin oxide (ITO) and Au MEA. The bi-layer LOR sputter deposition processed Au MEA showed an impedance value of 6 × 105 廓 (at 1 kHz), with good consistency over 60 electrodes. The passivation performance of the bi-layer LOR sputter-deposited SiO2 was tested by electrodepositing Au nanoparticles (NPs) on the Au electrode, resulting in the well-confined and uniformly coated Au NPs. The bi-layer LOR sputter deposition processed ITO, Au, and Au NP-modified MEAs were evaluated and found to have a neuronal spike recording capability at a single unit level, confirming the validity of the bi-layer LOR sputter deposition as an effective passivation technique in fabrication of a MEA. These results suggest that the damage-free Au MEA fabricated with bi-layer LOR sputter deposition would be a viable platform for screening surface modification techniques that are available in neuronal interfacing. © 2013 IOP Publishing Ltd.
KSP 제안 키워드
Au electrode, Au nanoparticles(Au-NPs), Lift-off resist, Low temperature(LT), Multi-electrode array, Negative photoresist, Neuronal spike, Silicon dioxide, Sputter-deposited, Surface modification techniques, Top layer