BROWSE
Detail
Journal Article
Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits
Cited 64 time in 
Share 
Share
- Authors
- Kang-Jun Baeg, Soon-Won Jung, Dongyoon Khim, Juhwan Kim, Dong-Yu Kim, Jae Bon Koo, Jordan R. Quinn, Antonio Facchetti, In-Kyu You, Yong-Young Noh
- Issue Date
- 2013-05
- Citation
- Organic Electronics, v.14, no.5, pp.1407-1418
- ISSN
- 1566-1199
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We report the development of high-performance inkjet-printed organic field-effect transistors (OFETs) and complementary circuits using high-k polymer dielectric blends comprising poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) for high-speed and low-voltage operation. Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type P(NDI2OD-T2) OFETs showed high field-effect mobilities of 0.1-0.4 cm 2 V-1 s-1 and low threshold voltages down to 5 V. These OFET properties were modified by changing the blend ratio of P(VDF-TrFE) and PMMA. The optimum blend-a 7:3 wt% mixture of P(VDF-TrFE) and PMMA-was successfully used to realize high-performance complementary inverters and ring oscillators (ROs). The complementary ROs operated at a supplied bias (VDD) of 5 V and showed an oscillation frequency (fosc) as high as ~80 kHz at VDD = 30 V. Furthermore, the fosc of the complementary ROs was significantly affected by a variety of fundamental parameters such as the electron and hole mobilities, channel width and length, capacitance of the gate dielectrics, VDD, and the overlap capacitance in the circuit configuration.© 2013 Elsevier B.V. All rights reserved.
- KSP Keywords
- Blend ratio, Channel Width, Circuit configuration, Complementary circuits, Complementary inverters, Electronic circuit, Field Effect Transistor(FET), First Stokes(S1), High Speed, High performance, High-k polymer dielectric