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Journal Article Quantum Confinement Effects in Transferrable Silicon Nanomembranes and Their Applications on Unusual Substrates
Cited 51 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Houk Jang, Wonho Lee, Sang M. Won, Seoung Yoon Ryu, Donghun Lee, Jae Bon Koo, Seong-Deok Ahn, Cheol-Woong Yang, Moon-Ho Jo, Jeong Ho Cho, John A Rogers, Jong-Hyun Ahn
Issue Date
2013-11
Citation
Nano Letters, v.13, no.11, pp.5600-5607
ISSN
1530-6984
Publisher
American Chemical Society(ACS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1021/nl403251e
Abstract
Two dimensional (2D) semiconductors have attracted attention for a range of electronic applications, such as transparent, flexible field effect transistors and sensors owing to their good optical transparency and mechanical flexibility. Efforts to exploit 2D semiconductors in electronics are hampered, however, by the lack of efficient methods for their synthesis at levels of quality, uniformity, and reliability needed for practical applications. Here, as an alternative 2D semiconductor, we study single crystal Si nanomembranes (NMs), formed in large area sheets with precisely defined thicknesses ranging from 1.4 to 10 nm. These Si NMs exhibit electronic properties of two-dimensional quantum wells and offer exceptionally high optical transparency and low flexural rigidity. Deterministic assembly techniques allow integration of these materials into unusual device architectures, including field effect transistors with total thicknesses of less than 12 nm, for potential use in transparent, flexible, and stretchable forms of electronics. © 2013 American Chemical Society.
KSP Keywords
2D semiconductors, Electronic properties, Field Effect Transistor(FET), Flexural rigidity, High optical transparency, Mechanical flexibility, Quantum confinement effect, Si nanomembranes, Single crystal, deterministic assembly, large area