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Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In–Zn–Ti–O active channel and ferroelectric copolymer gate insulator
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- Authors
- Jun Yong Bak, Soon Won Jung, Sung Min Yoon
- Issue Date
- 2013-09
- Citation
- Organic Electronics, v.14, no.9, pp.2148-2157
- ISSN
- 1566-1199
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- The nonvolatile memory thin-film transistors (M-TFTs) using a solution-processed indiumzinc-titanium oxide (IZTiO) active channel and a poly(vinylidene fluoride-trifluoroethylene) ferroelectric gate insulator were fabricated and characterized to elucidate the relationships between the IZTiO channel composition and the memory performances such as program speed and data retention. The compositions of the spin-coated IZTiO layers were modified with different Ti amounts of 0, 2, 5, and 10 mol%. The carrier concentration of IZTiO channel layer was effectively modulated by the incorporated Ti amounts and the defect densities within the channel were effectively reduced by Ti incorporation. The MTFT fabricated with IZTiO channel with 2-mol% Ti composition exhibited the best overall device performances, in which the μFE, SS, MW, and programmed Ion/off were obtained to be 23.6 cm2 V -1 s-1, 701 mV/decade, 11.8 V, and 1.2 × 10 5, respectively. Furthermore, thanks to the suitable amounts of Ti incorporation into the IZO, the improved program speed and data retention properties were successfully confirmed. © 2013 Elsevier B.V.
- KSP Keywords
- Active channel, Carrier concentration, Channel layer, Ferroelectric gate, First Stokes(S1), Memory performance, Nonvolatile memory(NVM), Retention properties, Solution-processed, Spin-coated, Thin-Film Transistor(TFT)