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Stability Characteristics of Gallium-Doped Zinc-Tin-Oxide Thin-Film Transistors Fabricated Using a Sol-Gel Method
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- Authors
- Jong Hoon Lee, Chang Hoi Kim, Hong Seung Kim, Jae Hoon Park, Jin Hwa Ryu, Kyu-Ha Baek, Lee-Mi Do
- Issue Date
- 2013-04
- Citation
- Journal of the Korean Physical Society, v.62, no.8, pp.1176-1182
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the incorporation of Ga into zinc-tin-oxide (ZTO) thin-film transistors (TFTs) and assessed the TFTs' electrical and stability properties. The Ga-doped ZTO (ZTO:Ga) thin films were deposited on thermally oxidized silicon substrates by using a sol-gel technique. The Ga contents were varied from 1 to 20 atomic percent (at.%) while the Zn:Sn ratio was maintained at 1:1. The dependence of the ZTO:Ga thin films' structural properties on the Ga content was analyzed using Xray diffraction (XRD) spectra, scanning probe microscopy (SPM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectrophotometry. The field effect mobilities and the I on/I off ratios of the ZTO:Ga-TFTs were between 0.68 and 2.95 cm2Vs-1s-1 and ~104 and ~106, respectively. At low Ga contents, the (<10-at.%) TFTs displayed similar TFT parameters, but the 20-at.%-Ga TFT showed improved mobility and stability characteristics. Moreover, the 20-at.%-Ga thin film had a smoother surface and increased crystallinity than the low Ga-content samples did. © 2013 The Korean Physical Society.
- KSP Keywords
- First Stokes(S1), Ga content, Ga-doped, I off, Oxidized silicon, S/N ratio, Scanning Probe Microscopy, Silicon substrate, Sol-gel technique, Stability characteristics, Stability properties