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Conference Paper
The Flexible Solar Cells with Cu(In,Ga)Se2 Absorber Grown by using the Se Thermal Cracker on the Polyimide Substrate
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- Authors
- Soo-Jeong Park, Woo-Jung Lee, Dae-Hyung Cho, Jae-Hyung Wi, Won-Seok Han, Yousuk Cho, Jong-man Yoon, Yong-Duck Chung
- Issue Date
- 2013-12
- Citation
- International Conference on Advanced Materials and Devices (ICAMD) 2013, pp.1-18
- Language
- English
- Type
- Conference Paper
- Abstract
- The polyimide substrate was used for the fabrication of the flexible Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. To deposit the stable Mo layer on the flexible substrate, the residual stress of polyimide films was measured after the deposition of Mo layer by varying the process pressure. The CIGS absorber was deposited on Mo layer at growth temperature below 500 o C by using Se thermal cracker as a function of cracking zone temperature (T C ) to improve reactivity of Se due to the low process temperature. To investigate Na effect on efficiency of flexible CIGS solar cell, Mo:Na layer as a source of Na was deposited between the Mo layer and the polyimide substrate. In case of the flexible CIGS solar cell fabricated under the condition of T C of 800 o C with Mo:Na layer, the highest cell efficiency was achieved at 10.76% without antireflection coating, which is significantly increased by 4 % as compared with cell efficiency of solar cell without Mo:Na layer.
- KSP Keywords
- CIGS absorber, Cell Efficiency, Flexible CIGS solar cell, Growth temperature, Na effect, Polyimide substrate, Process pressure, Process temperature, Residual stress, T c, Thin film solar cells