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X-Band Low Noise Amplifier MMIC Using AlGaN/GaN HEMT Technology on SiC Substrate
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- Authors
- Woojin Chang, Gye-Ik Jeon, Young-Rak Park, Sangheung Lee, Jae-Kyoung Mun
- Issue Date
- 2013-11
- Citation
- Asia-Pacific Microwave Conference (APMC) 2013, pp.681-684
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A 9.7-12.9 GHz monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) is designed and fabricated using AlGaN/GaN 0.25 μm high electron mobility transistor (HEMT) on silicon carbide (SiC) technology. The LNA shows a noise figure of 1.7-2.1 dB with a small-signal gain of 20-26 dB across the 9.7-12.9 GHz frequency range. In continuous wave (CW) conditions, the saturated output power of 34 dBm is showed at 11.2 GHz and the output third-order intercept point (OIP3) of 42 dBm is also achieved at 11.4 GHz. © 2013 IEEE.
- KSP Keywords
- AlGaN/GaN HEMTs, Frequency Range, GaN HEMT technology, High electron mobility transistor(HEMT), Intercept point(IIP3), Microwave monolithic integrated circuits(MMIC), Noise Figure(NF), Saturated output power, SiC substrate, Small signal gain, continuous wave(CW)