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Conference Paper
ZnS Buffer Layer Prepared by Sulfurization of Sputtered Zn Film for Cu(In,Ga)Se2 Solar Cells
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- Authors
- Dae-Hyung Cho, Ju-Hee Kim, Jae-Hyung Wi, Soo-Jeong Park, Choong-Heui Chung, Won Seok Han, Jeha Kim, Yong-Duck Chung
- Issue Date
- 2013-06
- Citation
- Photovoltaic Specialists Conference (PVSC) 2013, pp.1110-1113
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- We report on a novel method of a fabrication of a ZnS buffer layer for an application of Cu(In, Ga)Se2 (CIGS) solar cells. The ZnS thin film was prepared by a sulfurization of a sputtered Zn film using a sulfur cracker. The structural and optical properties of the ZnS films and the photovoltaic performance of the ZnS-employed CIGS solar cells were investigated. The thin ZnS film played a sufficient role as a buffer layer achieving the power conversion efficiency of 10.5%. © 2013 IEEE.
- KSP Keywords
- CIGS solar cell, Conversion efficiency(C.E.), Zn film, ZnS buffer layer, ZnS films, ZnS thin films, novel method, photovoltaic performance, power conversion efficiency, structural and optical properties, thin film(TF)