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Conference Paper
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Recessed Gate by ICP Etching of BCl3/SF6
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- Authors
- Hyung Sup Yoon, Byoung Gue Min, Jong Min Lee, Dong Min Kang, Ho Kyun Ahn, Sung Il Kim, Chul Won Ju, Hae Cheon Kim, Jong Won Lim
- Issue Date
- 2014-12
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.81-81
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- AlGaN/GaN HEMTs, ICP etching, RF characteristics, recessed gate