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DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Recessed Gate by ICP Etching of BCl3/SF6
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- 발행일
- 201412
- 출처
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.81-81
- 협약과제
- 13VB5900, SW기반 디지털 무선통신용 핵심 모듈 및 트랜시버 개발, 윤형섭
- KSP 제안 키워드
- AlGaN/GaN HEMTs, ICP etching, RF characteristics, recessed gate