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Conference Paper
100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz
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- Authors
- Dong Min Kang, Jong Won Lim, Ho Kyun Ahn, Sung Il Kim, Hae Cheon Kim, Hyung Sup Yoon, Yong Hwan Kwon, Eun Soo Nam
- Issue Date
- 2014-12
- Citation
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75
- Language
- English
- Type
- Conference Paper
- Abstract
- This paper describes the successful development and the performance of X-band 100 W pulsed SSPA using a 25 W GaN-on-SiC High Electron Mobility Transistor(HEMT). The GaN HEMT with a gate length of 0.25 m and a total gate width of 8 mm were fabricated. The GaN HEMT provide a linear gain of 8 dB with 25 W output power operated at 30 V drain voltage in CW-operation with a power added efficiency(PAE) of 43 % at X-band. It also shows a maximum output power density of 3 W/mm. The X-band pulsed SSPA exhibited an output power of 100 W(50 dBm) with a power gain of 53 dB in a frequency range of 9.2 -9.5 GHz.. This 25 W GaN HEMT and X-band 100 W pulsed SSPA are suitable for the radar systems and related applications in X-band.
- KSP Keywords
- 9.5 GHZ, AlGaN/GaN HEMTs, Drain voltage, Frequency Range, GaN HEMT technology, GaN on SiC, Gate Width, High electron mobility transistor(HEMT), Output power density, Power added efficiency(PAE), Power gain