상세정보
학술지
Conduction and Low-Frequency Noise Analysis in Al/α-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices
- 저자
- 이정규, 정후영, 조인탁, Jeong Yong Lee, 최성율, Hyuck-In Kwon, 이종호
- 발행일
- 201006
- 출처
- IEEE Electron Device Letters, v.31 no.6, pp.603-605
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 09MB7200, 플렉서블 PoRAM 소재 원천기술 개발, 최성율
- 초록
- We investigated the low-frequency noise (LFN) properties of the bipolar switching resistance random access memories (RRAMs) for the first time with amorphous TiOX-based RRAM devices. The LFNs are proportional to 1/f for both high-resistance (HRS) and low-resistance states (LRS). The normalized noise Si/I2 in HRS is around an order of magnitude higher than that in LRS. The random telegraph noise (RTN) is observed only in HRS, which represents that the dominant trap causing the RTN becomes electrically inactive by being filled with electrons in LRS. The voltage dependence of S i/I2 shows that the noise can be used to elucidate the operation mechanism of RRAM devices. © 2006 IEEE.
- KSP 제안 키워드
- Bipolar switching, Low frequency noise, Normalized noise, Operation Mechanism, RRAM devices, Random Telegraph noise, Resistive Random Access Memory(RRAM), Voltage dependence, memory device, noise analysis