BROWSE
Detail
Journal Article
Conduction and Low-Frequency Noise Analysis in Al/α-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices
Cited 42 time in 
Share 
Share
- Authors
- Jung-Kyu Lee, Hu Young Jeong, In-Tak Cho, Jeong Yong Lee, Sung-Yool Choi, Hyuck-In Kwon, Jong-Ho Lee
- Issue Date
- 2010-06
- Citation
- IEEE Electron Device Letters, v.31, no.6, pp.603-605
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the low-frequency noise (LFN) properties of the bipolar switching resistance random access memories (RRAMs) for the first time with amorphous TiOX-based RRAM devices. The LFNs are proportional to 1/f for both high-resistance (HRS) and low-resistance states (LRS). The normalized noise Si/I2 in HRS is around an order of magnitude higher than that in LRS. The random telegraph noise (RTN) is observed only in HRS, which represents that the dominant trap causing the RTN becomes electrically inactive by being filled with electrons in LRS. The voltage dependence of S i/I2 shows that the noise can be used to elucidate the operation mechanism of RRAM devices. © 2006 IEEE.
- KSP Keywords
- Bipolar switching, Low-Frequency Noise, Normalized noise, Operation Mechanism, RRAM devices, Random Telegraph Noise, memory device, noise analysis, random access memory(RAM), resistance random access memory(ReRAM), voltage dependence