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Optical and Electrical Properties of AlxTi1-xO Films
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- Authors
- Jung Wook Lim, Seong Hyun Lee, Sun Jin Yun
- Issue Date
- 2010-01
- Citation
- Journal of the Korean Physical Society, v.56, no.1, pp.96-99
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- In the growth of AlxTi1-x (ATO) films prepared by plasma enhanced atomic layer deposition (PEALD), electrical and optical properties were investigated in the present research. The refractive index can be controlled by adjusting the cycle combination of TiO2 and Al 2O3 in PEALD at 150 °C, where the plastic material can be used for flexible devices. AlxTi1-xO (ATO) films on Si substrates had dramatically reduced reflectivity. The controllability of the thickness and the refractive index of the ATO film can shift the reflection curves, which suggests that ATO can be a useful antireflection coating layer for improving the light conversion efficiency for Si solar cells. The current-voltage curves of ATO films exhibited nonlinearity, and nonlinear coefficient values of 4.8 to 7.2 were obtained. The leakage current was gradually reduced as the Ti content was decreased.
- KSP Keywords
- Conversion efficiency(C.E.), Current-voltage curves, Flexible device, Leakage Current, Light conversion efficiency, Optical and electrical properties, Plasma-enhanced atomic layer deposition, Si solar cells, Si substrate, Ti content, antireflection coating