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학술지 Optical and Electrical Properties of AlxTi1-xO Films
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저자
임정욱, 이성현, 윤선진
발행일
201001
출처
Journal of the Korean Physical Society, v.56 no.1, pp.96-99
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.56.96
협약과제
09MB5500, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
초록
In the growth of AlxTi1-x (ATO) films prepared by plasma enhanced atomic layer deposition (PEALD), electrical and optical properties were investigated in the present research. The refractive index can be controlled by adjusting the cycle combination of TiO2 and Al 2O3 in PEALD at 150 °C, where the plastic material can be used for flexible devices. AlxTi1-xO (ATO) films on Si substrates had dramatically reduced reflectivity. The controllability of the thickness and the refractive index of the ATO film can shift the reflection curves, which suggests that ATO can be a useful antireflection coating layer for improving the light conversion efficiency for Si solar cells. The current-voltage curves of ATO films exhibited nonlinearity, and nonlinear coefficient values of 4.8 to 7.2 were obtained. The leakage current was gradually reduced as the Ti content was decreased.
키워드
AlTiO, PEALD, Reflectance, Thin him solar cell
KSP 제안 키워드
Conversion efficiency(C.E.), Current-voltage curves, Electrical and optical properties, Leakage current, Light conversion efficiency, Optical and electrical properties, Plasma-enhanced atomic layer deposition, Plastic material, Si solar cells, Si substrate, Ti content