상세정보
학술지
Optical and Electrical Properties of AlxTi1-xO Films
- 발행일
- 201001
- 출처
- Journal of the Korean Physical Society, v.56 no.1, pp.96-99
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 초록
- In the growth of AlxTi1-x (ATO) films prepared by plasma enhanced atomic layer deposition (PEALD), electrical and optical properties were investigated in the present research. The refractive index can be controlled by adjusting the cycle combination of TiO2 and Al 2O3 in PEALD at 150 °C, where the plastic material can be used for flexible devices. AlxTi1-xO (ATO) films on Si substrates had dramatically reduced reflectivity. The controllability of the thickness and the refractive index of the ATO film can shift the reflection curves, which suggests that ATO can be a useful antireflection coating layer for improving the light conversion efficiency for Si solar cells. The current-voltage curves of ATO films exhibited nonlinearity, and nonlinear coefficient values of 4.8 to 7.2 were obtained. The leakage current was gradually reduced as the Ti content was decreased.
- KSP 제안 키워드
- Conversion efficiency(C.E.), Current-voltage curves, Electrical and optical properties, Leakage current, Light conversion efficiency, Optical and electrical properties, Plasma-enhanced atomic layer deposition, Plastic material, Si solar cells, Si substrate, Ti content