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학술지 Incorporation of Cu in Cu(In,Ga)Se2-based Thin-Film Solar Cells
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저자
정용덕, 조대형, 한원석, 박래만, 이규석, 김제하
발행일
201012
출처
Journal of the Korean Physical Society, v.57 no.61, pp.1826-1830
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.57.1826
협약과제
09MB7800, 고효율 장수명 Flexible CIGS 박막 태양전지 및 모듈 양산기술개발, 김제하
초록
We have fabricated Cu(In,Ga)Se2 (CIGS)-based thin-film solar cells by using a cluster-type deposition system. The system is composed of a DC sputter for the Mo back electrode, a co-evaporator for the CIGS absorption layer, and a RF sputter for the ZnO and the transparent-conductive-oxide (TCO) window layers. The deposition of the CdS buffer layer was performed separately. Two solar cells with an effective area of 0.47 cm2 were fabricated using different processes. One cell, which was prepared with a 1-step process, had a larger atomic concentration of In-Ga than of Cu in the absorption layer and showed a conversion efficiency of 11.1%. The other prepared with a 3-step process had nearly the same In-Ga and Cu concentrations and showed a conversion efficiency of 15.5%. We discuss the incorporation of Cu in the two types of thin-film solar cells.
키워드
Cu(In,Ga)Se 2, Ordered defect compound, Solar cell, Thin film
KSP 제안 키워드
Absorption layer, Atomic concentration, CdS buffer layer, Conversion efficiency(C.E.), DC sputter, Effective Area, RF sputter, Thin film solar cells, back electrode, ordered defect compound(ODC), thin film(TF)