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Journal Article Incorporation of Cu in Cu(In,Ga)Se2-based Thin-Film Solar Cells
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Authors
Yong-Duck Chung, Dae-Hyung Cho, Won-Seok Han, Nae-Man Park, Kyu-Seok Lee, Jeha Kim
Issue Date
2010-12
Citation
Journal of the Korean Physical Society, v.57, no.61, pp.1826-1830
ISSN
0374-4884
Publisher
한국물리학회 (KPS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.3938/jkps.57.1826
Project Code
09MB7800, Development of mass production technology of high efficiency and long durability flexible CIGS thin film solar cell and module, Kim Je Ha
Abstract
We have fabricated Cu(In,Ga)Se2 (CIGS)-based thin-film solar cells by using a cluster-type deposition system. The system is composed of a DC sputter for the Mo back electrode, a co-evaporator for the CIGS absorption layer, and a RF sputter for the ZnO and the transparent-conductive-oxide (TCO) window layers. The deposition of the CdS buffer layer was performed separately. Two solar cells with an effective area of 0.47 cm2 were fabricated using different processes. One cell, which was prepared with a 1-step process, had a larger atomic concentration of In-Ga than of Cu in the absorption layer and showed a conversion efficiency of 11.1%. The other prepared with a 3-step process had nearly the same In-Ga and Cu concentrations and showed a conversion efficiency of 15.5%. We discuss the incorporation of Cu in the two types of thin-film solar cells.
KSP Keywords
Absorption layer, Atomic concentration, CdS buffer layer, Conversion efficiency(C.E.), DC sputter, Effective Area, RF sputter, Thin film solar cells, back electrode, thin film(TF), window layer