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P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain
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- Authors
- Sung-Jin Choi, Jin-Woo Han, Dong-Il Moon, Sungho Kim, Moongyu Jang, Yang-Kyu Choi
- Issue Date
- 2010-08
- Citation
- IEEE Transactions on Electron Devices, v.57, no.8, pp.1737-1742
- ISSN
- 0018-9383
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A p-channel dopant-segregated-Schottky-barrier (DSSB) device based on a SOI FinFET structure is proposed for silicon-oxide-nitride-oxide-silicon type Flash memory, providing the feasibility of bit-by-bit operation through the aid of a symmetric program/erase operation. This concept is based on utilizing injected holes due to enhanced Fowler-Nordheim tunneling probability triggered by the sharpened energy band bending at the DSSB source/drain junctions as a programming method and the tunneled electrons from a silicon channel as an erasing method. As a result, a threshold voltage window of nearly 4 V and good data retention are achieved within a P/E time of 3.2 μs. © 2006 IEEE.
- KSP Keywords
- Energy band, Fowler-Nordheim tunneling, Good Data, Oxide-nitride-oxide(ONO), P-Channel, Programming method, SOI FinFET, Schottky barrier, Silicon oxide, Voltage window, band bending