상세정보
학술지
In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films
- 발행일
- 201004
- 출처
- Materials Transactions, v.51 no.4, pp.793-798
- ISSN
- 1345-9678
- 출판사
- Japan Institute of Metals
- 협약과제
- 10SF1300, 생체진단 가능 시각/미각 수용체 기반 센싱 기술 개발, 송기봉
- 초록
- We fabricated metal-oxide-semiconductor (MOS) devices with a high-k Er-silicate gate dielectric, and demonstrated their electrical performance. The increase in the rapid thermal annealing (RTA) temperature leads to a reduction of the equivalent oxide thickness (EOT), which is attributed in par to the thickness evolution of Er-silicate film and to the chemical bonding change from an Si-rich to an Er-rich silicate. The insitu investigation of the interfacial reaction between the Er and SiO2 film using a high-voltage electron microscopy (HVEM) revealed a linear relationship between the squared thickness of Er-silicate layer and in-situ annealing time, indicating that the Er-silicate growth is a diffusion-controlled process. The parabolic growth constants of the Er-silicate film were calculated to be 2.3 × 10-16 and 9.3 × 10-16 cm2/s for in-situ annealing temperatures of 350 and 450°C, respectively. ©2010 The Japan Institute of Metals.
- KSP 제안 키워드
- Annealing temperature, Annealing time, Chemical bonding, Diffusion-controlled process, Growth constants, High-K, High-voltage electron microscopy, In-situ annealing, In-situ transmission electron microscopy, Interfacial reaction, Metal-oxide(MOX)