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In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films
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- Authors
- Chel-Jong Choi, Seung-Min Kang, Hyo-Bong Hong, Soo-Hyung Lee, Jin-Gyu Kim, Kwang-Soon Ahn, Jong-Won Yoon
- Issue Date
- 2010-04
- Citation
- Materials Transactions, v.51, no.4, pp.793-798
- ISSN
- 1345-9678
- Publisher
- Japan Institute of Metals
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated metal-oxide-semiconductor (MOS) devices with a high-k Er-silicate gate dielectric, and demonstrated their electrical performance. The increase in the rapid thermal annealing (RTA) temperature leads to a reduction of the equivalent oxide thickness (EOT), which is attributed in par to the thickness evolution of Er-silicate film and to the chemical bonding change from an Si-rich to an Er-rich silicate. The insitu investigation of the interfacial reaction between the Er and SiO2 film using a high-voltage electron microscopy (HVEM) revealed a linear relationship between the squared thickness of Er-silicate layer and in-situ annealing time, indicating that the Er-silicate growth is a diffusion-controlled process. The parabolic growth constants of the Er-silicate film were calculated to be 2.3 × 10-16 and 9.3 × 10-16 cm2/s for in-situ annealing temperatures of 350 and 450°C, respectively. ©2010 The Japan Institute of Metals.
- KSP Keywords
- Annealing temperature, Annealing time, Chemical bonding, Diffusion-controlled process, Electrical performance, Electron microscopy(SEM), Equivalent oxide thickness, Growth constants, High-voltage electron microscopy, In-situ annealing, In-situ transmission electron microscopy