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Journal Article Linearity Enhanced 2.4 GHz WLAN HBT Power Amplifier Using Digitally-Controlled Tunable Output Matching Network with pHEMT Switch in GaAs BiFET Technology
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Authors
S.-W. Yoon, S.-I. Kim
Issue Date
2010-11
Citation
Electronics Letters, v.46, no.23, pp.1573-1574
ISSN
0013-5194
Publisher
IET
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1049/el.2010.2499
Project Code
10MB4400, Open Lab Power Amplifier Platform Technology for Wireless Communication and xAN, Hyung Sup Yoon
Abstract
Presented is the linearity improvement technique of a power amplifier (PA) using a digitally-controlled tunable output matching network implemented in GaAs BiFET technology. The load impedance of the heterojunction bipolar transistor (HBT) power device in the last stage of the PA is adjustable in terms of output power levels by a metal-insulator-metal (MIM) capacitor array with pHEMT switches in the output matching network. A 2.4GHz two-stage PA for IEEE 802.11g, Wireless Local Area Network (WLAN) application, is implemented to demonstrate the technique. Not only is the maximum linear output power of the PA increased by 2.5dB, but the linearity is also improved by 4dB at the output power of 15dBm for the error vector magnitude specification of -28dB. © 2010 The Institution of Engineering and Technology.
KSP Keywords
2.4 GHz, BiFET technology, Capacitor array, Digitally controlled, Heterojunction Bipolar Transistors(HBTs), IEEE 802.11g, Last stage, Local Area Network(LAN), Output matching network, Output power, Power Levels