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학술지 Linearity Enhanced 2.4 GHz WLAN HBT Power Amplifier Using Digitally-Controlled Tunable Output Matching Network with pHEMT Switch in GaAs BiFET Technology
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저자
윤상웅, 김성일
발행일
201011
출처
Electronics Letters, v.46 no.23, pp.1573-1574
ISSN
0013-5194
출판사
IET
DOI
https://dx.doi.org/10.1049/el.2010.2499
협약과제
10MB4400, 무선통신 /xAN을 위한 개방형 Power Amplifier 플랫폼 기술, 윤형섭
초록
Presented is the linearity improvement technique of a power amplifier (PA) using a digitally-controlled tunable output matching network implemented in GaAs BiFET technology. The load impedance of the heterojunction bipolar transistor (HBT) power device in the last stage of the PA is adjustable in terms of output power levels by a metal-insulator-metal (MIM) capacitor array with pHEMT switches in the output matching network. A 2.4GHz two-stage PA for IEEE 802.11g, Wireless Local Area Network (WLAN) application, is implemented to demonstrate the technique. Not only is the maximum linear output power of the PA increased by 2.5dB, but the linearity is also improved by 4dB at the output power of 15dBm for the error vector magnitude specification of -28dB. © 2010 The Institution of Engineering and Technology.