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Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device
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- Authors
- S. V. Jagadeesh Chandra, Mi-Ra Jeong, Kyu-Hwan Shim, Hyo-Bong Hong, Soo-Hyung Lee, Kwang-Soon Ahn, Chel-Jong Choi
- Issue Date
- 2010-04
- Citation
- Journal of the Electrochemical Society, v.157, no.5, pp.H546-H550
- ISSN
- 0013-4651
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated Ge and Si metal oxide semiconductor devices with Pt/ HfO 2 gate stacks and investigated their structural and electrical properties. Postmetallization annealing in O2 ambient reduced the accumulation capacitance more significantly in Si devices than in Ge devices due to the increase in the thickness of a low- k interfacial layer in between the HfO2 film and Si substrate. Ge devices exhibited lower effective work function values for a Pt gate electrode than Si devices owing to the presence of a large number of positively charged dipoles caused by a strong Fermi-level pinning at the Ge surface. © 2010 The Electrochemical Society.
- KSP Keywords
- Effective work function, Fermi-level pinning, Ge surface, Hfo 2, Interfacial layer, Metal-oxide(MOX), Positively charged, Si devices, Si substrate, Structural and electrical properties, gate electrode