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Journal Article
Effects of N2 and NH3 Remote Plasma Nitridation on the Structural and Electrical Characteristics of the HfO2 Gate Dielectrics
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- Authors
- K.-S. Park, K.-H. Baek, D.P. Kim, J.-C. Woo, L.-M. Do, K.-S. No
- Issue Date
- 2010-12
- Citation
- Applied Surface Science, v.257, no.4, pp.1347-1350
- ISSN
- 0169-4332
- Publisher
- Elsevier Science, Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- The remote plasma nitridation (RPN) of an HfO 2 film using N 2 and NH 3 has been investigated comparatively. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses after post-deposition annealing (PDA) at 700 °C show that a large amount of nitrogen is present in the bulk film as well as in the interfacial layer for the HfO 2 film nitrided with NH 3 -RPN. It is also shown that the interfacial layer formed during RPN and PDA is a nitrogen-rich Hf-silicate. The C-V characteristics of an HfO x N y gate dielectric nitrided with NH 3 -RPN have a smaller equivalent oxide thickness than that nitrided with N 2 -RPN in spite of its thicker interfacial layer. © 2010 Elsevier B.V. All rights reserved.
- KSP Keywords
- Auger Electron Spectroscopy, C-V characteristics, Computer Vision(CV), Electron spectroscopy(82.80.Pv), Equivalent oxide thickness, Hf-silicate, HfO x, Hfo 2, Interfacial layer, N 2, NH 3