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학술지 Effects of N2 and NH3 Remote Plasma Nitridation on the Structural and Electrical Characteristics of the HfO2 Gate Dielectrics
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저자
박건식, 백규하, 김동표, 우종창, 도이미, 노광수
발행일
201012
출처
Applied Surface Science, v.257 no.4, pp.1347-1350
ISSN
0169-4332
출판사
Elsevier Science, Elsevier
DOI
https://dx.doi.org/10.1016/j.apsusc.2010.08.069
초록
The remote plasma nitridation (RPN) of an HfO 2 film using N 2 and NH 3 has been investigated comparatively. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses after post-deposition annealing (PDA) at 700 °C show that a large amount of nitrogen is present in the bulk film as well as in the interfacial layer for the HfO 2 film nitrided with NH 3 -RPN. It is also shown that the interfacial layer formed during RPN and PDA is a nitrogen-rich Hf-silicate. The C-V characteristics of an HfO x N y gate dielectric nitrided with NH 3 -RPN have a smaller equivalent oxide thickness than that nitrided with N 2 -RPN in spite of its thicker interfacial layer. © 2010 Elsevier B.V. All rights reserved.
KSP 제안 키워드
Auger Electron Spectroscopy, C-V characteristics, Computer Vision(CV), Hf-silicate, HfO x, Hfo 2, N 2, NH 3, Nitrogen-rich, Postdeposition annealing(PDA), Remote plasma nitridation