상세정보
학술대회
A 40 W AlGaN/GaN MMIC High Power Amplifier for C-Band Radar Applications
- 발행일
- 201410
- 출처
- European Microwave Conference (EuMC) 2014, pp.1126-1129
- 초록
- In this paper, we present a 40 W microwave monolithic integrated circuit high power amplifier using commercial 0.25 mm AlGaN/GaN technology for use in a C-band phased array radar system. This two-stage amplifier, with a chip size of 3.8 mm × 3.9 mm can achieve a saturated output power of 40 W with higher than 35% power added efficiency and 22 dB small signal gain over a frequency range of 5.4 GHz to 6.1 GHz. An output power density of 2.6 W/mm2 is demonstrated with a compact 14.82 mm2 chip area.
- KSP 제안 키워드
- 2 mm, C-band radar, Chip area, Frequency Range, GaN technology, High power amplifier(HPA), Output power density, Phased Array Radar System, Power added efficiency(PAE), Radar applications, Saturated output power