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Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer
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- Authors
- Soon-Won Jung, Jong-Keun Lee, Young Soon Kim, Sung-Min Yoon, In-Kyu You, Byoung-Gon Yu, Yong-Young Noh
- Issue Date
- 2010-01
- Citation
- Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61
- ISSN
- 1567-1739
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Low-voltage top-gated ferroelectric polymer memory thin-film-transistors (TFTs) have been fabricated using a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and an amorphous conjugated polymer poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. TFTs having amorphous semiconducting polymers such as F8T2 exhibit near perfect yield due to their smooth surface morphology. The transfer curves of the fabricated TFTs exhibited counter-clockwise hysteretic behaviors, which is a result of the ferroelectric nature of P(VDF-TrFE). Memory transistors using Ni/P(VDF-TrFE)/F8T2 exhibit promising behaviors such as a memory window of 2.5 V at VG of 5 to -10 V, four orders-of-magnitude of ON/OFF ratio, and gate leakage current of 10-10 A. © 2009 Elsevier B.V. All rights reserved.
- KSP Keywords
- AND gate, Conjugated polymer(PFO-co-MEH-PPV), Low voltage, ON/OFF ratio, Polymer memory, Smooth surface, Thin-Film Transistor(TFT), VDF-TrFE(PZT/P), Vinylidene fluoride(VDF), ferroelectric nature, ferroelectric polymer(PVDF)