상세정보
학술지
Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer
- 발행일
- 201001
- 출처
- Current Applied Physics, v.10 no.1 SUPPL., pp.e58-e61
- ISSN
- 1567-1739
- 출판사
- Elsevier
- 협약과제
- 09IC1900, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
- 초록
- Low-voltage top-gated ferroelectric polymer memory thin-film-transistors (TFTs) have been fabricated using a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and an amorphous conjugated polymer poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. TFTs having amorphous semiconducting polymers such as F8T2 exhibit near perfect yield due to their smooth surface morphology. The transfer curves of the fabricated TFTs exhibited counter-clockwise hysteretic behaviors, which is a result of the ferroelectric nature of P(VDF-TrFE). Memory transistors using Ni/P(VDF-TrFE)/F8T2 exhibit promising behaviors such as a memory window of 2.5 V at VG of 5 to -10 V, four orders-of-magnitude of ON/OFF ratio, and gate leakage current of 10-10 A. © 2009 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- AND gate, Conjugated polymer(PFO-co-MEH-PPV), Hysteretic behavior, Polymer memory, Smooth surface, Thin-Film Transistor(TFT), ferroelectric nature, ferroelectric polymer, gate dielectric, gate leakage current, low voltage