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Journal Article High Mobility Top-Gated Poly(3-hexylthiophene) Field-Effect Transistors with High Work-Function Pt Electrodes
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Authors
Kang-Jun Baeg, Dongyoon Khim, Dong-Yu Kim, Jae Bon Koo, In-Kyu You, Won San Choi, Yong-Young Noh
Issue Date
2010-05
Citation
Thin Solid Films, v.518, no.14, pp.4024-4029
ISSN
0040-6090
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.tsf.2010.01.026
Abstract
We report high-performance top-gated organic field-effect transistors (OFETs) with regio-regular poly(3-hexylthiophene) (rr-P3HT). The high charge carrier mobility in rr-P3HT FETs (0.4 cm2/Vs) was achieved due to the relatively low contact resistance and high crystallinity of rr-P3HT films. The contact resistance was controlled mainly through the use of high work-function platinum (Pt) (5.6 eV) for the charge injection electrode and a top-gate, bottom-contact geometry that enabled an enhanced current injection via current crowding in the staggered device structure. Moreover, the top-gate configuration provided improved device stability in air ambient conditions via the presence of a gate dielectric and gate electrode on top of the organic semiconductor. © 2010 Elsevier B.V. All rights reserved.
KSP Keywords
AND gate, Bottom contact, Charge carrier mobility, Contact geometry, Contact resistance(73.40.Cg), Current injection, Device structure, Field Effect Transistor(FET), High charge, High crystallinity, High performance