상세정보
학술지
High Mobility Top-Gated Poly(3-hexylthiophene) Field-Effect Transistors with High Work-Function Pt Electrodes
- 발행일
- 201005
- 출처
- Thin Solid Films, v.518 no.14, pp.4024-4029
- ISSN
- 0040-6090
- 출판사
- Elsevier
- 초록
- We report high-performance top-gated organic field-effect transistors (OFETs) with regio-regular poly(3-hexylthiophene) (rr-P3HT). The high charge carrier mobility in rr-P3HT FETs (0.4 cm2/Vs) was achieved due to the relatively low contact resistance and high crystallinity of rr-P3HT films. The contact resistance was controlled mainly through the use of high work-function platinum (Pt) (5.6 eV) for the charge injection electrode and a top-gate, bottom-contact geometry that enabled an enhanced current injection via current crowding in the staggered device structure. Moreover, the top-gate configuration provided improved device stability in air ambient conditions via the presence of a gate dielectric and gate electrode on top of the organic semiconductor. © 2010 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- 3-hexylthiophene(SEM poly), AND gate, Bottom contact, Charge carrier mobility, Contact geometry, Contact resistance(73.40.Cg), Current injection, Device structure, Field-effect transistors(FETs), High Mobility, High charge