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High Mobility Top-Gated Poly(3-hexylthiophene) Field-Effect Transistors with High Work-Function Pt Electrodes
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- Authors
- Kang-Jun Baeg, Dongyoon Khim, Dong-Yu Kim, Jae Bon Koo, In-Kyu You, Won San Choi, Yong-Young Noh
- Issue Date
- 2010-05
- Citation
- Thin Solid Films, v.518, no.14, pp.4024-4029
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We report high-performance top-gated organic field-effect transistors (OFETs) with regio-regular poly(3-hexylthiophene) (rr-P3HT). The high charge carrier mobility in rr-P3HT FETs (0.4 cm2/Vs) was achieved due to the relatively low contact resistance and high crystallinity of rr-P3HT films. The contact resistance was controlled mainly through the use of high work-function platinum (Pt) (5.6 eV) for the charge injection electrode and a top-gate, bottom-contact geometry that enabled an enhanced current injection via current crowding in the staggered device structure. Moreover, the top-gate configuration provided improved device stability in air ambient conditions via the presence of a gate dielectric and gate electrode on top of the organic semiconductor. © 2010 Elsevier B.V. All rights reserved.
- KSP Keywords
- AND gate, Bottom contact, Charge carrier mobility, Contact geometry, Contact resistance(73.40.Cg), Current injection, Device structure, Field Effect Transistor(FET), High charge, High crystallinity, High performance