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Conference Paper
An Envelope-tracking Supply Modulator in a 180 nm SOI CMOS Technology for Multi-band LTE Power Amplifiers
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- Authors
- Seunghyun Jang, Jaeho Jung, Kwangchun Lee, Bonghyuk Park
- Issue Date
- 2014-12
- Citation
- Korea-Japan Microwave Workshop (KJMW) 2014, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- An envelope-tracking (ET) supply modulator for multi-band LTE power amplifiers is designed using a 0.18μm SOI CMOS process. It consists of mainly two blocks of a buck switching converter and a class AB linear amplifier for high-efficiency and wideband operation. To improve the transient performance of the ET modulator, a dynamic biasing circuit is designed for the class-AB linear amplifier. The simulation results showed that the modulator delivered its output power up to 6.3 W with a peak current of 1.4 A. With an LTE 10 MHz envelope signal, the designed modulator showed an average efficiency of 75.8% with a resistive load of 3.2 ohm.
- KSP Keywords
- Average efficiency, CMOS Process, CMOS Technology, Class AB(CAB), Envelope signal, Output power, Peak Current, Resistive load, SOI CMOS, Supply modulator, biasing circuit