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학술대회
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
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- 발행일
- 201412
- 출처
- International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131
- 협약과제
- 13DB1200, GaN 트랜지스터 기반의 Ku-Band 고출력 증폭기 개발, 임종원
- 초록
- An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the -shaped gate with the “head” of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the “foot” of the gate which showed a possibility for a gate length reduction.
- KSP 제안 키워드
- AlGaN/GaN HEMTs, Breakdown voltage(BDV), Field Plate, Gate resistance, High electron mobility transistor(HEMT), Leakage current, Low noise, T-shaped gate, fabrication process, gate length, noise level