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Journal Article 10.7 Gb/s Reflective Electroabsorption Modulator Monolithically Integrated with Semiconductor Optical Amplifier for Colorless WDM-PON
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Authors
Hyun-Soo Kim, Dong Churl Kim, Ki-Soo Kim, Byung-Seok Choi, O-Kyun Kwon
Issue Date
2010-10
Citation
Optics Express, v.18, no.22, pp.23324-23330
ISSN
1094-4087
Publisher
Optical Society of America(OSA)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1364/OE.18.023324
Project Code
10MB2200, Development of optical component technologies for advanced FTTH, Kwon O-Kyun
Abstract
We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10 -9 bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10 -9 BER. © 2010 Optical Society of America.
KSP Keywords
Bit Error Rate(And BER), Power variation, Received power, Semiconductor optical amplifiers(SOAs), Spectral range, Wavelength-division-multiplexing passive optical network(WDM-PON), electroabsorption modulator(EAM), extinction ratio, fabrication process, monolithically integrated, power penalty
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