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Journal Article
10.7 Gb/s Reflective Electroabsorption Modulator Monolithically Integrated with Semiconductor Optical Amplifier for Colorless WDM-PON
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- Authors
- Hyun-Soo Kim, Dong Churl Kim, Ki-Soo Kim, Byung-Seok Choi, O-Kyun Kwon
- Issue Date
- 2010-10
- Citation
- Optics Express, v.18, no.22, pp.23324-23330
- ISSN
- 1094-4087
- Publisher
- Optical Society of America(OSA)
- Language
- English
- Type
- Journal Article
- Project Code
- 10MB2200, Development of optical component technologies for advanced FTTH, Kwon O-Kyun
- Abstract
- We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10 -9 bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10 -9 BER. © 2010 Optical Society of America.
- KSP Keywords
- Bit Error Rate(And BER), Power variation, Received power, Semiconductor optical amplifiers(SOAs), Spectral range, Wavelength-division-multiplexing passive optical network(WDM-PON), electroabsorption modulator(EAM), extinction ratio, fabrication process, monolithically integrated, power penalty