상세정보
학술지
10.7 Gb/s Reflective Electroabsorption Modulator Monolithically Integrated with Semiconductor Optical Amplifier for Colorless WDM-PON
- 발행일
- 201010
- 출처
- Optics Express, v.18 no.22, pp.23324-23330
- ISSN
- 1094-4087
- 출판사
- Optical Society of America(OSA)
- 협약과제
- 10MB2200, FTTH 고도화 광부품 기술개발, 권오균
- 초록
- We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10 -9 bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10 -9 BER. © 2010 Optical Society of America.
- KSP 제안 키워드
- Bit Error Rate(And BER), Power variation, Received power, Semiconductor optical amplifiers(SOAs), Spectral range, Wavelength-division-multiplexing passive optical network(WDM-PON), electroabsorption modulator(EAM), extinction ratio, fabrication process, monolithically integrated, power penalty