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Conference Paper
Enhancement in Optical and Electrical Efficiency of a Si Nanocrystal Light-emitting Diode by Indium Tin Oxide Nanowires
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- Authors
- Chul Huh, Tae-Youb Kim, Byoung-Jun Park, Eun-Hye Jang, Sang-Hyeob Kim
- Issue Date
- 2014-06
- Citation
- TechConnect World 2014, pp.1-4
- Language
- English
- Type
- Conference Paper
- Abstract
- We report an enhancement in light emission efficiency form Si nanocrystal (NC) light-emitting diodes (LEDs) by employing indium tin oxide (ITO) nanowires (NWs). The electrical characteristics of Si NC LED with ITO NWs were significantly improved, which was attributed to an enhancement in the current spreading property of the ITO transparent layer and a decrease in the dynamic resistance of the whole Si NC LED. Moreover, light output power and wall-plug efficiency (WPE) from the Si NC LED with ITO NWs were enhanced by 45 and 38 %, respectively. The results presented here can provide a very promising way to significantly enhance the performance of Si NC LED.
- KSP Keywords
- Dynamic resistance, Emission Efficiency, Light Emission, Light output power(Lop), Light-emitting diodes (leds), Si nanocrystal, Wall-plug efficiency, current spreading, electrical characteristics, electrical efficiency, indium tin oxide(ITO)