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Group IV Nanowires for Ultra-high Performance Photonic Devices
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- Authors
- Dongwoo Suh, Lin Chen, Ugo Otuonye, Wei Lu
- Issue Date
- 2014-07
- Citation
- International Nanotechnology Symposium (Nanofair) 2014, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- The present study is about group IV semiconductor nanowires that can detect light wave up to mid-wavelength infrared working as IR sensors. Even though Si or Ge can't capture infrared beyond their absorption edge, the metal-semiconductor diode comprising core/shell nanowire structure can detect light far beyond the band gap by adjusting the barrier level to the absorption cut-off range. The present p-n nanowire diodes show excellent photo detection at ~ 1.55 m and metal-semiconductor diodes do the same effect at mid-wavelength infrared, more specifically ~ 3 m at room temperature. Both of p-n and Schottky diodes showed typical diode behavior with more excellent photonic properties than normal devices to the extent we know.
- KSP Keywords
- Core/shell nanowires, Cut-off, Group IV semiconductor, IR sensors, Light wave, Metal-semiconductor, Petri net(PN), Room temperature, Semiconductor diode, Ultra-high performance, absorption edge