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Conference Paper
33.3: High Mobility and Highly Stable Aluminum‐doped Indium Zinc Tin Oxide Thin‐Film Transistors
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- Authors
- Sung Haeng Cho, Sang-Hee Ko Park, Chi-Sun Hwang, Min Ki Ryu, In Yong Eom, Jong Woo Kim, Jong-Heon Yang, Hee-Ok Kim, O-Sang Kwon, Eun-Suk Park, Sun Kwon Lim
- Issue Date
- 2014-06
- Citation
- Society for Information Display (SID) International Symposium 2014, v.45, no.1, pp.473-475
- ISSN
- 0097-966X
- Language
- English
- Type
- Conference Paper
- Abstract
- We report highly stable and high mobility aluminum-doped indium zinc tin oxide (AIZTO) thin-film transistor with field effect mobility larger than 30 cm2/Vs in the bottom gate, etch-stopper structure. The electrical instabilities against positive gate bias stress, negative gate bias stress, and negative gate bias under illumination stress are investigated. © 2014 Society for Information Display.
- KSP Keywords
- Aluminum-doped, Bottom gate, Highly stable, Information display, Thin-Film Transistor(TFT), Zinc Tin Oxide(ZTO), field-effect mobility, gate bias stress, high mobility, indium zinc tin oxide, thin film(TF)