상세정보
학술대회
High Mobility and Highly Stable Aluminum-Doped Indium Zinc Tin Oxide Thin-Film Transistors
- 발행일
- 201406
- 출처
- Society for Information Display (SID) International Symposium 2014, v.45 no.1, pp.473-475
- ISSN
- 0097-966X
- 협약과제
- 14PB2600, 폭 1500mm 플렉서블 기판에 산화물 박막 트랜지스터 증착을 위한 스퍼터 장비 실용화 기술 개발, 조성행
- 초록
- We report highly stable and high mobility aluminum-doped indium zinc tin oxide (AIZTO) thin-film transistor with field effect mobility larger than 30 cm2/Vs in the bottom gate, etch-stopper structure. The electrical instabilities against positive gate bias stress, negative gate bias stress, and negative gate bias under illumination stress are investigated. © 2014 Society for Information Display.
- KSP 제안 키워드
- Aluminum-doped, Bottom gate, Gate bias stress, High Mobility, Highly stable, Indium zinc tin oxide(IZTO), Information Display, Thin-Film Transistor(TFT), field-effect mobility, oxide thin-film transistors, thin film(TF)