상세정보
학술지
Phase-Change Memory Device Fabricated Using Solid-State Alloying
- 발행일
- 201004
- 출처
- Electronics Letters, v.46 no.9, pp.652-654
- ISSN
- 0013-5194
- 출판사
- IET
- 초록
- A novel fabrication method for phase-change memory devices using solid-state alloying is presented, which enables programming current reduction. Preformed pores, exposing germanium layers, were filled with antimony-tellurium layers, and germanium-antimony-tellurium (GST) phase-change layers were prepared by the solid-state alloying of germanium and antimony-tellurium. Programming currents for reset and set operations were drastically reduced compared to those of a control device. The decreased programming currents are attributed to a small-sized programmable volume and the existence of GST thermal barriers. © 2010 The Institution of Engineering and Technology.
- KSP 제안 키워드
- Control device, Fabrication method, Phase Change Material(PCM), RESET and SET, Small-sized, Solid-state alloying, Thermal barrier, current reduction, memory device, programming current