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학술지 Phase-Change Memory Device Fabricated Using Solid-State Alloying
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저자
이승윤, 박영삼, 윤성민, 정순원, 유병곤
발행일
201004
출처
Electronics Letters, v.46 no.9, pp.652-654
ISSN
0013-5194
출판사
IET
DOI
https://dx.doi.org/10.1049/el.2010.0039
협약과제
10ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 현창희
초록
A novel fabrication method for phase-change memory devices using solid-state alloying is presented, which enables programming current reduction. Preformed pores, exposing germanium layers, were filled with antimony-tellurium layers, and germanium-antimony-tellurium (GST) phase-change layers were prepared by the solid-state alloying of germanium and antimony-tellurium. Programming currents for reset and set operations were drastically reduced compared to those of a control device. The decreased programming currents are attributed to a small-sized programmable volume and the existence of GST thermal barriers. © 2010 The Institution of Engineering and Technology.
KSP 제안 키워드
Control device, Fabrication method, Phase Change Material(PCM), RESET and SET, Small-sized, Solid-state alloying, Thermal barrier, current reduction, memory device, programming current