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Phase-Change Memory Device Fabricated Using Solid-State Alloying
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- Authors
- S.-Y. Lee, Y.S. Park, S.-M. Yoon, S.-W. Jung, B.-G. Yu
- Issue Date
- 2010-04
- Citation
- Electronics Letters, v.46, no.9, pp.652-654
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- A novel fabrication method for phase-change memory devices using solid-state alloying is presented, which enables programming current reduction. Preformed pores, exposing germanium layers, were filled with antimony-tellurium layers, and germanium-antimony-tellurium (GST) phase-change layers were prepared by the solid-state alloying of germanium and antimony-tellurium. Programming currents for reset and set operations were drastically reduced compared to those of a control device. The decreased programming currents are attributed to a small-sized programmable volume and the existence of GST thermal barriers. © 2010 The Institution of Engineering and Technology.
- KSP Keywords
- Control device, Fabrication method, Phase Change Material(PCM), RESET and SET, Small-sized, Solid-state alloying, Thermal barrier, current reduction, memory device, programming current