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Journal Article Phase-Change Memory Device Fabricated Using Solid-State Alloying
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Authors
S.-Y. Lee, Y.S. Park, S.-M. Yoon, S.-W. Jung, B.-G. Yu
Issue Date
2010-04
Citation
Electronics Letters, v.46, no.9, pp.652-654
ISSN
0013-5194
Publisher
IET
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1049/el.2010.0039
Abstract
A novel fabrication method for phase-change memory devices using solid-state alloying is presented, which enables programming current reduction. Preformed pores, exposing germanium layers, were filled with antimony-tellurium layers, and germanium-antimony-tellurium (GST) phase-change layers were prepared by the solid-state alloying of germanium and antimony-tellurium. Programming currents for reset and set operations were drastically reduced compared to those of a control device. The decreased programming currents are attributed to a small-sized programmable volume and the existence of GST thermal barriers. © 2010 The Institution of Engineering and Technology.
KSP Keywords
Control device, Fabrication method, Phase Change Material(PCM), RESET and SET, Small-sized, Solid-state alloying, Thermal barrier, current reduction, memory device, programming current