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High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability
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- Authors
- Shinhyuk Yang, Doo-Hee Cho, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Jin Jang, Jae Kyeong Jeong
- Issue Date
- 2010-02
- Citation
- IEEE Electron Device Letters, v.31, no.2, pp.144-146
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated high-performance thin-film transistors (TFTs) with an amorphous-AlSnZnInO (a-AT-ZIO) channel deposited by cosputtering using a dual AlZnO and InSnO target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 $ cm2/V s an excellent subthreshold gate swing of 0.07 V/decade, and a high Ion/offratio of 109 even below the process temperature of 250 °C. In addition, we demonstrated that the temperature and bias-induced stability of the bottom-gate TFT structure can significantly be improved by adopting a suitable passivation layer of atomic-layer-deposition-derived Al2O3 thin film. © 2006 IEEE.
- KSP Keywords
- Atomic Layer Deposition, Bottom contact, Bottom gate, Contact configuration, Device stability, High performance, Process temperature, Thin-Film Transistor(TFT), high field-effect mobility, passivation layer, thin film(TF)