상세정보
학술지
High-Performance Al-Sn-Zn-In-O Thin-Film Transistors: Impact of Passivation Layer on Device Stability
- 발행일
- 201002
- 출처
- IEEE Electron Device Letters, v.31 no.2, pp.144-146
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We fabricated high-performance thin-film transistors (TFTs) with an amorphous-AlSnZnInO (a-AT-ZIO) channel deposited by cosputtering using a dual AlZnO and InSnO target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 $ cm2/V s an excellent subthreshold gate swing of 0.07 V/decade, and a high Ion/offratio of 109 even below the process temperature of 250 °C. In addition, we demonstrated that the temperature and bias-induced stability of the bottom-gate TFT structure can significantly be improved by adopting a suitable passivation layer of atomic-layer-deposition-derived Al2O3 thin film. © 2006 IEEE.
- KSP 제안 키워드
- Al-Sn, Atomic Layer Deposition, Bottom contact, Bottom gate, Contact configuration, Device stability, High performance, Process temperature, Sn-Zn, Thin-Film Transistor(TFT), high field-effect mobility