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Journal Article Comprehensive Modeling of Resistive Switching in the Al/TiOx/TiO2/Al Heterostructure Based on Space-Charge-Limited Conduction
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Authors
Sungho Kim, Hu Young Jeong, Sung-Yool Choi, Yang-Kyu Choi
Issue Date
2010-07
Citation
Applied Physics Letters, v.97, no.3, pp.1-3
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.3467461
Abstract
The reversible resistance switching (RS) effect of the Al/TiO x/TiO2/Al heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the TiOx layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system. © 2010 American Institute of Physics.
KSP Keywords
Analytical model, Carrier density, Experimental data, Material system, Proposed model, Reversible resistance switching, Space charge limited conduction, TiO x, Trapped carrier, resistive switching