상세정보
학술지
Comprehensive Modeling of Resistive Switching in the Al/TiOx/TiO2/Al Heterostructure Based on Space-Charge-Limited Conduction
- 저자
- 김성호, 정후영, 최성율, 최양규
- 발행일
- 201007
- 출처
- Applied Physics Letters, v.97 no.3, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 09MB7200, 플렉서블 PoRAM 소재 원천기술 개발, 최성율
- 초록
- The reversible resistance switching (RS) effect of the Al/TiO x/TiO2/Al heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the TiOx layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system. © 2010 American Institute of Physics.
- KSP 제안 키워드
- Analytical model, Carrier density, Experimental Data, Material system, Proposed model, Reversible resistance switching, Space charge limited conduction, TiO x, Trapped carrier, resistive switching